Discrete Semiconductor Products

DMN2024UQ-13

Active

Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Package PDF +1

Discrete Semiconductor Products

DMN2024UQ-13

Active

Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheet Package PDF +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2024UQ-13

Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	647 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	800 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	900 mV

DMN2024UFDF Series

Dual N-Channel Enhancement Mode MOSFET

Part	Package / Case	Mounting Type	Supplier Device Package	Vgs (Max)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Grade	Gate Charge (Qg) (Max) @ Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C
Diodes Inc DMN2024UQ-13	SC-59 SOT-23-3 TO-236-3	Surface Mount	SOT-23-3	10 V	800 mW	-55 °C	150 °C	25 mOhm	900 mV	MOSFET (Metal Oxide)	1.8 V 4.5 V	20 V	AEC-Q101	647 pF	Automotive	6.5 nC	N-Channel
Diodes Inc DMN2024U-7	SC-59 SOT-23-3 TO-236-3	Surface Mount	SOT-23-3	10 V	800 mW	-55 °C	150 °C	25 mOhm	900 mV	MOSFET (Metal Oxide)	1.8 V 4.5 V	20 V		647 pF			N-Channel	7.1 nC
Diodes Inc DMN2024UVT-13	SOT-23-6 Thin TSOT-23-6	Surface Mount	TSOT-23-6			-55 °C	150 °C	24 mOhm	900 mV	MOSFET (Metal Oxide)		20 V		647 pF		7.1 nC			1 W	2 N-Channel (Dual) Common Drain	7 A
Diodes Inc DMN2024UFDF-13	6-UDFN Exposed Pad	Surface Mount	U-DFN2020-6 (Type F)	10 V	960 mW	-55 °C	150 °C	22 mOhm	1 V	MOSFET (Metal Oxide)	1.5 V 4.5 V	20 V		647 pF			N-Channel	0.9 nC			7.1 A
Diodes Inc DMN2024UDH-7	8-PowerUDFN	Surface Mount	U-DFN3030-8			-55 °C	150 °C	23 mOhm	1 V	MOSFET (Metal Oxide)		20 V		647 pF		7.1 nC			950 mW	2 N-Channel (Dual)	5.2 A
Diodes Inc DMN2024UFDF-7	6-UDFN Exposed Pad	Surface Mount	U-DFN2020-6 (Type F)	10 V	960 mW	-55 °C	150 °C	22 mOhm	1 V	MOSFET (Metal Oxide)	1.5 V 4.5 V	20 V		647 pF			N-Channel	0.9 nC			7.1 A
Diodes Inc DMN2024U-13	SC-59 SOT-23-3 TO-236-3	Surface Mount	SOT-23-3	10 V	800 mW	-55 °C	150 °C	25 mOhm	900 mV	MOSFET (Metal Oxide)	1.8 V 4.5 V	20 V		647 pF			N-Channel	7.1 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	10000	$ 0.10
		30000	$ 0.10
		50000	$ 0.09

Description

General part information

DMN2024UFDF Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

Documents

Technical documentation and resources

Datasheet

Package PDF

Package File

Recommended Soldering Techniques

Technical Document