
Catalog
Dual N-Channel Enhancement Mode MOSFET
| Part | Package / Case | Mounting Type | Supplier Device Package | Vgs (Max) | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Technology | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Qualification | Input Capacitance (Ciss) (Max) @ Vds | Grade | Gate Charge (Qg) (Max) @ Vgs | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] | Configuration | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | SC-59 SOT-23-3 TO-236-3 | Surface Mount | SOT-23-3 | 10 V | 800 mW | -55 °C | 150 °C | 25 mOhm | 900 mV | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 20 V | AEC-Q101 | 647 pF | Automotive | 6.5 nC | N-Channel | ||||
Diodes Inc | SC-59 SOT-23-3 TO-236-3 | Surface Mount | SOT-23-3 | 10 V | 800 mW | -55 °C | 150 °C | 25 mOhm | 900 mV | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 20 V | 647 pF | N-Channel | 7.1 nC | ||||||
Diodes Inc | SOT-23-6 Thin TSOT-23-6 | Surface Mount | TSOT-23-6 | -55 °C | 150 °C | 24 mOhm | 900 mV | MOSFET (Metal Oxide) | 20 V | 647 pF | 7.1 nC | 1 W | 2 N-Channel (Dual) Common Drain | 7 A | |||||||
Diodes Inc | 6-UDFN Exposed Pad | Surface Mount | U-DFN2020-6 (Type F) | 10 V | 960 mW | -55 °C | 150 °C | 22 mOhm | 1 V | MOSFET (Metal Oxide) | 1.5 V 4.5 V | 20 V | 647 pF | N-Channel | 0.9 nC | 7.1 A | |||||
Diodes Inc | 8-PowerUDFN | Surface Mount | U-DFN3030-8 | -55 °C | 150 °C | 23 mOhm | 1 V | MOSFET (Metal Oxide) | 20 V | 647 pF | 7.1 nC | 950 mW | 2 N-Channel (Dual) | 5.2 A | |||||||
Diodes Inc | 6-UDFN Exposed Pad | Surface Mount | U-DFN2020-6 (Type F) | 10 V | 960 mW | -55 °C | 150 °C | 22 mOhm | 1 V | MOSFET (Metal Oxide) | 1.5 V 4.5 V | 20 V | 647 pF | N-Channel | 0.9 nC | 7.1 A | |||||
Diodes Inc | SC-59 SOT-23-3 TO-236-3 | Surface Mount | SOT-23-3 | 10 V | 800 mW | -55 °C | 150 °C | 25 mOhm | 900 mV | MOSFET (Metal Oxide) | 1.8 V 4.5 V | 20 V | 647 pF | N-Channel | 7.1 nC |
Key Features
• Low On-Resistance
• Low-Input Capacitance
• Fast Switching Speed
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. "Green" Device (Note 3)
• The DMN2024UQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/
Description
AI
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.