Specification	BSS138PS,115

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	320 mA
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	0.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	50 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	420 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	6-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

BSS138PS Series

60 V, 320 mA dual N-channel Trench MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Package / Case	FET Feature	Configuration	Technology	Supplier Device Package	Grade	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Operating Temperature
Nexperia USA Inc. BSS138PS,115	0.8 nC	420 mW	6-TSSOP SC-88 SOT-363	Logic Level Gate	2 N-Channel (Dual)	MOSFET (Metal Oxide)	6-TSSOP	Automotive	60 V	320 mA	Surface Mount	1.5 V	1.6 Ohm	50 pF	AEC-Q101	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	228015	$ 0.45

Description

General part information

BSS138PS Series

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.