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60 V, 320 mA dual N-channel Trench MOSFET
Description
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Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, 320 mA dual N-channel Trench MOSFET
60 V, 320 mA dual N-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] | Package / Case | FET Feature | Configuration | Technology | Supplier Device Package | Grade | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Qualification | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 0.8 nC | 420 mW | 6-TSSOP SC-88 SOT-363 | Logic Level Gate | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 6-TSSOP | Automotive | 60 V | 320 mA | Surface Mount | 1.5 V | 1.6 Ohm | 50 pF | AEC-Q101 | 150 °C |