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Transistor MOSFET N-CH 60V 5.7A 6-Pin DFN2020MD T/R
Discrete Semiconductor Products

BUK6D120-40EX

Active
Nexperia USA Inc.

TRANSISTOR MOSFET N-CH 40V 5.7A 6-PIN FN2020MD T/R

Transistor MOSFET N-CH 60V 5.7A 6-Pin DFN2020MD T/R
Discrete Semiconductor Products

BUK6D120-40EX

Active
Nexperia USA Inc.

TRANSISTOR MOSFET N-CH 40V 5.7A 6-PIN FN2020MD T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationBUK6D120-40EX
Current - Continuous Drain (Id) @ 25°C5.7 A
Current - Continuous Drain (Id) @ 25°C2.9 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]113 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power Dissipation (Max)7.5 W, 2 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs120 mOhm
Supplier Device PackageDFN2020MD-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 4408$ 0.69

Description

General part information

BUK6D120-40E Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.