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40 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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40 V, N-channel Trench MOSFET
40 V, N-channel Trench MOSFET
| Part | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Supplier Device Package | Qualification | Technology | FET Type | Mounting Type | Package / Case | Grade | Current - Continuous Drain (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 20 V | 4.5 V 10 V | 2 W 7.5 W | 113 pF | 120 mOhm | 40 V | DFN2020MD-6 | AEC-Q101 | MOSFET (Metal Oxide) | N-Channel | Surface Mount | 6-UDFN Exposed Pad | Automotive | 5.7 A | 2.9 A | 175 °C | -55 °C | 2.5 V | 3.6 nC |