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onsemi-FDMS7556S MOSFETs Trans MOSFET N-CH Si 25V 35A 8-Pin PQFN EP T/R
Discrete Semiconductor Products

FDMS039N08B

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 80V, 100A, 3.9MΩ

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Search across all available documentation for this part.

DocumentsDatasheetPackage Drawing-483AE-PQFN8 5x6, 1.27P+2
onsemi-FDMS7556S MOSFETs Trans MOSFET N-CH Si 25V 35A 8-Pin PQFN EP T/R
Discrete Semiconductor Products

FDMS039N08B

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 80V, 100A, 3.9MΩ

Deep-Dive with AI

DocumentsDatasheetPackage Drawing-483AE-PQFN8 5x6, 1.27P+2

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS039N08B
Current - Continuous Drain (Id) @ 25°C19.4 A, 100 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]100 nC
Input Capacitance (Ciss) (Max) @ Vds7600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5 W
Power Dissipation (Max)104 W
Rds On (Max) @ Id, Vgs3.9 mOhm
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.09
10$ 2.01
100$ 1.39
500$ 1.13
1000$ 1.04
Digi-Reel® 1$ 3.09
10$ 2.01
100$ 1.39
500$ 1.13
1000$ 1.04
Tape & Reel (TR) 3000$ 0.98
NewarkEach (Supplied on Full Reel) 3000$ 1.25
6000$ 1.19
12000$ 1.07
18000$ 1.03
30000$ 0.98
ON SemiconductorN/A 1$ 0.91

Description

General part information

FDMS039N08B Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.