FDMS039N08B Series

N-Channel PowerTrench® MOSFET 80V, 100A, 3.9mΩ

Catalog

N-Channel PowerTrench® MOSFET 80V, 100A, 3.9mΩ

Part	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDMS039N08B	8-PQFN (5x6)	MOSFET (Metal Oxide)	10 V	19.4 A 100 A	100 nC	3.9 mOhm	4.5 V	Surface Mount	-55 °C	150 °C	N-Channel	8-PowerTDFN	80 V	2.5 W	104 W	20 V	7600 pF

Catalog

N-Channel PowerTrench® MOSFET 80V, 100A, 3.9mΩ

Key Features

• RDS(on)= 3.2 mΩ (Typ.)@ VGS= 10 V, ID= 50 A

• Low FOM RDS(on)*QG

• Low Reverse Recovery Charge, Qrr= 80nC

• Soft reverse recovery Body Diode

• Enables highly efficiency in synchronous rectification

• Fast Switching Speed

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.