Discrete Semiconductor Products

UPR10E3/TR7

Active

DIODE SWITCHING 100V 2.5A 2-PIN(1+TAB) POWER MITE T/R

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE SWITCHING 100V 2.5A 2-PIN(1+TAB) POWER MITE T/R

Technical Specifications

Parameters and characteristics for this part

Specification	UPR10E3/TR7

Current - Reverse Leakage @ Vr	2 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-216AA
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-216
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	975 mV

Part	Technology	Speed	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Microchip Technology UPR10E3/TR13	Standard	200 mA 500 ns	Surface Mount	975 mV	DO-216AA	DO-216	25 ns	100 V	2 µA	150 °C	-55 °C
Microchip Technology UPR10E3/TR7	Standard	200 mA 500 ns	Surface Mount	975 mV	DO-216AA	DO-216	25 ns	100 V	2 µA	150 °C	-55 °C
Microchip Technology UPR10/TR7	Standard	200 mA 500 ns	Surface Mount	975 mV	DO-216AA	DO-216	25 ns	100 V	2 µA	150 °C	-55 °C
Microchip Technology UPR10/TR13	Standard	200 mA 500 ns	Surface Mount	975 mV	DO-216AA	DO-216	25 ns	100 V	2 µA	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Working Peak Reverse Voltage: 100V

Low thermal resistance DO-216 package for higher current operation

Ultrafast recovery time of 25 ns

Technical documentation and resources