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INFINEON IKW08N120CS7XKSA1
Discrete Semiconductor Products

IKW40N120CS7XKSA1

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INFINEON

HE IKW40N120CS7 IS A 1200 V, 40 A IGBT7 S7 WITH ANTI-PARALLEL DIODE IN TO-247 PACKAGE

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INFINEON IKW08N120CS7XKSA1
Discrete Semiconductor Products

IKW40N120CS7XKSA1

Active
INFINEON

HE IKW40N120CS7 IS A 1200 V, 40 A IGBT7 S7 WITH ANTI-PARALLEL DIODE IN TO-247 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIKW40N120CS7XKSA1
Current - Collector (Ic) (Max) [Max]82 A
Current - Collector Pulsed (Icm)120 A
Gate Charge230 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-247-3
Power - Max [Max]357 W
Reverse Recovery Time (trr)175 ns
Supplier Device PackagePG-TO247-3
Switching Energy1.75 mJ, 2.55 mJ
Td (on/off) @ 25°C190 ns
Td (on/off) @ 25°C27 ns
Test Condition15 V, 40 A, 600 V, 4 Ohm
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 184$ 6.84
Tube 1$ 7.68
30$ 6.13
120$ 5.49
510$ 4.84
1020$ 4.36
2010$ 4.08
NewarkEach 1$ 7.70
10$ 7.32
25$ 5.16
50$ 4.76
100$ 4.36
480$ 4.35
720$ 3.86

Description

General part information

IKW40N120 Series

Hard-switching 1200 V, 40 ATRENCHSTOP™ IGBT7S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsatto achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contibuiting to overall low total losses.

Documents

Technical documentation and resources