Discrete Semiconductor Products

VP0808L-G

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TRANS MOSFET P-CH SI 80V 0.28A 3-PIN TO-92 BAG

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Discrete Semiconductor Products

Active

TRANS MOSFET P-CH SI 80V 0.28A 3-PIN TO-92 BAG

Technical Specifications

Parameters and characteristics for this part

Specification	VP0808L-G

Current - Continuous Drain (Id) @ 25°C	280 mA
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	150 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds
Microchip Technology VP0808L-G	TO-226-3 TO-92-3	10 V	5 Ohm	4.5 V	30 V	-55 °C	150 °C	TO-92-3	80 V	280 mA	Through Hole	MOSFET (Metal Oxide)	1 W	P-Channel	150 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 80 V 280mA (Tj) 1W (Tc) Through Hole TO-92-3

Technical documentation and resources