Discrete Semiconductor Products

SIA112LDJ-T1-GE3

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N-CHANNEL 100-V (D-S) MOSFET POW

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Discrete Semiconductor Products

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N-CHANNEL 100-V (D-S) MOSFET POW

Technical Specifications

Parameters and characteristics for this part

Specification	SIA112LDJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	3.5 A, 8.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.8 nC
Input Capacitance (Ciss) (Max) @ Vds	355 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	15.6 W, 2.9 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	FET Type	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIA112LDJ-T1-GE3	2.9 W 15.6 W	N-Channel	MOSFET (Metal Oxide)	14 mOhm	3.5 A 8.8 A	25 V	-55 °C	150 °C	PowerPAK® SC-70-6	PowerPAK® SC-70-6	4.5 V 10 V	11.8 nC	Surface Mount	355 pF	2.5 V	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 3.5A (Ta), 8.8A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources