SIA112 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
N-CHANNEL 100-V (D-S) MOSFET POW
| Part | Power Dissipation (Max) | FET Type | Technology | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2.9 W 15.6 W | N-Channel | MOSFET (Metal Oxide) | 14 mOhm | 3.5 A 8.8 A | 25 V | -55 °C | 150 °C | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | 4.5 V 10 V | 11.8 nC | Surface Mount | 355 pF | 2.5 V | 100 V |