Specification	IR2183SPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	1.9 A
Current - Peak Output (Source, Sink) [custom]	2.3 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting, Inverting
Logic Voltage - VIL, VIH	0.8 V, 2.7 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Rise / Fall Time (Typ) [custom]	20 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2183 Series

Part	Gate Type	Input Type	Logic Voltage - VIL, VIH	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case	Package / Case	Package / Case	High Side Voltage - Max (Bootstrap) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Mounting Type	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]
INFINEON IR2183S	IGBT MOSFET (N-Channel) N-Channel MOSFET	Inverting Non-Inverting	0.8 V 2.7 V	20 ns	40 ns	0.154 in	8-SOIC	3.9 mm	600 V	-40 °C	150 °C	8-SOIC	Independent	1.9 A	2.3 A	Half-Bridge	Surface Mount	2	20 V	10 VDC
INFINEON IR2183	IGBT MOSFET (N-Channel) N-Channel MOSFET	Inverting Non-Inverting	0.8 V 2.7 V	20 ns	40 ns		8-DIP (0.300" 7.62mm)		600 V	-40 °C	150 °C	8-PDIP	Independent	1.9 A	2.3 A	Half-Bridge	Through Hole	2	20 V	10 VDC
INFINEON IR2183STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	Inverting Non-Inverting	0.8 V 2.7 V	20 ns	40 ns	0.154 in	8-SOIC	3.9 mm	600 V	-40 °C	150 °C	8-SOIC	Independent	1.9 A	2.3 A	Half-Bridge	Surface Mount	2	20 V	10 VDC
INFINEON IR2183PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Inverting Non-Inverting	0.8 V 2.7 V	20 ns	40 ns		8-DIP (0.300" 7.62mm)		600 V	-40 °C	150 °C	8-PDIP	Independent	1.9 A	2.3 A	Half-Bridge	Through Hole	2	20 V	10 VDC
INFINEON IR2183SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Inverting Non-Inverting	0.8 V 2.7 V	20 ns	40 ns	0.154 in	8-SOIC	3.9 mm	600 V	-40 °C	150 °C	8-SOIC	Independent	1.9 A	2.3 A	Half-Bridge	Surface Mount	2	20 V	10 VDC
INFINEON IR2183STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Inverting Non-Inverting	0.8 V 2.7 V	20 ns	40 ns	0.154 in	8-SOIC	3.9 mm	600 V	-40 °C	150 °C	8-SOIC	Independent	1.9 A	2.3 A	Half-Bridge	Surface Mount	2	20 V	10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3255	$ 3.79
	Tube	1	$ 4.02
		10	$ 3.61
		95	$ 2.96
		285	$ 2.81
		570	$ 2.52
		1045	$ 2.12
		2565	$ 2.02
		5035	$ 1.94
Newark	Each	1	$ 3.94
		10	$ 2.97
		25	$ 2.81
		50	$ 2.64
		100	$ 2.48
		250	$ 2.37
		500	$ 2.32

Description

General part information

IR2183 Series

The IR2183SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Gate Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.

Documents

Technical documentation and resources

Datasheet

Application Note AN-978 HV Floating MOS-Gate Driver ICs

Application Notes

Technical Data Sheet EN

Datasheet