IR2183 Series

Manufacturer: INFINEON

Catalog

IC GATE DRVR HALF-BRIDGE 8SOIC

Part	Gate Type	Input Type	Logic Voltage - VIL, VIH	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case	Package / Case	Package / Case	High Side Voltage - Max (Bootstrap) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Channel Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Mounting Type	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]
INFINEON IR2183S	IGBT MOSFET (N-Channel) N-Channel MOSFET	Inverting Non-Inverting	0.8 V 2.7 V	20 ns	40 ns	0.154 in	8-SOIC	3.9 mm	600 V	-40 °C	150 °C	8-SOIC	Independent	1.9 A	2.3 A	Half-Bridge	Surface Mount	2	20 V	10 VDC
INFINEON IR2183	IGBT MOSFET (N-Channel) N-Channel MOSFET	Inverting Non-Inverting	0.8 V 2.7 V	20 ns	40 ns		8-DIP (0.300" 7.62mm)		600 V	-40 °C	150 °C	8-PDIP	Independent	1.9 A	2.3 A	Half-Bridge	Through Hole	2	20 V	10 VDC
INFINEON IR2183STR	IGBT MOSFET (N-Channel) N-Channel MOSFET	Inverting Non-Inverting	0.8 V 2.7 V	20 ns	40 ns	0.154 in	8-SOIC	3.9 mm	600 V	-40 °C	150 °C	8-SOIC	Independent	1.9 A	2.3 A	Half-Bridge	Surface Mount	2	20 V	10 VDC
INFINEON IR2183PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Inverting Non-Inverting	0.8 V 2.7 V	20 ns	40 ns		8-DIP (0.300" 7.62mm)		600 V	-40 °C	150 °C	8-PDIP	Independent	1.9 A	2.3 A	Half-Bridge	Through Hole	2	20 V	10 VDC
INFINEON IR2183SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Inverting Non-Inverting	0.8 V 2.7 V	20 ns	40 ns	0.154 in	8-SOIC	3.9 mm	600 V	-40 °C	150 °C	8-SOIC	Independent	1.9 A	2.3 A	Half-Bridge	Surface Mount	2	20 V	10 VDC
INFINEON IR2183STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Inverting Non-Inverting	0.8 V 2.7 V	20 ns	40 ns	0.154 in	8-SOIC	3.9 mm	600 V	-40 °C	150 °C	8-SOIC	Independent	1.9 A	2.3 A	Half-Bridge	Surface Mount	2	20 V	10 VDC