Discrete Semiconductor Products
JANTX2N6338
ActiveMicrochip Technology
NPN SILICON POWER 100V TO 150V, 25A
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Search across all available documentation for this part.
Documents2N6338 and 2N6341
Discrete Semiconductor Products
JANTX2N6338
ActiveMicrochip Technology
NPN SILICON POWER 100V TO 150V, 25A
Deep-Dive with AI
Documents2N6338 and 2N6341
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTX2N6338 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 25 A |
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 30 |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-3, TO-204AA |
| Power - Max [Max] | 200 W |
| Qualification | MIL-PRF-19500/509 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.8 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 110.73 | |
| Microchip Direct | N/A | 1 | $ 119.25 | |
Description
General part information
JANTX2N6338-Transistor Series
This specification covers the performance requirements for NPN silicon power, 2N6338 and 2N6341 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/509.
Documents
Technical documentation and resources