Discrete Semiconductor Products

SI4838DY-T1-GE3

LTB

MOSFET N-CH 12V 17A 8SO

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Discrete Semiconductor Products

LTB

MOSFET N-CH 12V 17A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4838DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	600 mV

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SI4838DY-T1-GE3	2.5 V 4.5 V	12 V	8 V	60 nC	N-Channel	Surface Mount	17 A	600 mV	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	-55 °C	150 °C	3 mOhm	8-SOIC
Vishay General Semiconductor - Diodes Division SI4838BDY-T1-GE3	1.8 V 4.5 V	12 V	8 V		N-Channel	Surface Mount	34 A	1 V	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	-55 °C	150 °C	2.7 mOhm	8-SOIC	2.5 W 5.7 W	5760 pF	84 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 12 V 17A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

Technical documentation and resources