SI4838 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 12V 17A 8SO
| Part | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Supplier Device Package | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2.5 V 4.5 V | 12 V | 8 V | 60 nC | N-Channel | Surface Mount | 17 A | 600 mV | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | -55 °C | 150 °C | 3 mOhm | 8-SOIC | |||
Vishay General Semiconductor - Diodes Division | 1.8 V 4.5 V | 12 V | 8 V | N-Channel | Surface Mount | 34 A | 1 V | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | -55 °C | 150 °C | 2.7 mOhm | 8-SOIC | 2.5 W 5.7 W | 5760 pF | 84 nC |