Specification	CSD17575Q3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	4420 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.8 W, 108 W
Rds On (Max) @ Id, Vgs	2.3 mOhm
Supplier Device Package	8-VSON-CLIP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

CSD17575Q3 Series

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	Technology	FET Type	Power Dissipation (Max)	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Texas Instruments CSD17575Q3	4.5 V 10 V	Surface Mount	1.8 V	MOSFET (Metal Oxide)	N-Channel	2.8 W 108 W	8-PowerTDFN	8-VSON-CLIP (3.3x3.3)	-55 °C	150 °C	20 V	4420 pF	60 A	30 V	2.3 mOhm	30 nC
Texas Instruments CSD17575Q3T	4.5 V 10 V	Surface Mount	1.8 V	MOSFET (Metal Oxide)	N-Channel	2.8 W 108 W	8-PowerTDFN	8-VSON-CLIP (3.3x3.3)	-55 °C	150 °C	20 V	4420 pF	60 A	30 V	2.3 mOhm	30 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 1.9 mΩ, 30 V, SON 3×3 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources