Specification	FDMC8327L-L701

Current - Continuous Drain (Id) @ 25°C	14 A, 12 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1850 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	2.3 W, 30 W
Rds On (Max) @ Id, Vgs	9.7 mOhm
Supplier Device Package	8-MLP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMC8327L Series

N-Channel PowerTrench® MOSFET 40V, 14A, 9.7mΩ

Part	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDMC8327L-L701	N-Channel	Surface Mount	9.7 mOhm	40 V	2.3 W 30 W	MOSFET (Metal Oxide)	3 V	12 A 14 A	-55 °C	150 °C	8-PowerWDFN	20 V	26 nC	4.5 V 10 V	8-MLP (3.3x3.3)	1850 pF
ON Semiconductor FDMC8327L	N-Channel	Surface Mount	9.7 mOhm	40 V	2.3 W 30 W	MOSFET (Metal Oxide)	3 V	12 A 14 A	-55 °C	150 °C	8-PowerWDFN	20 V	26 nC	4.5 V 10 V	8-MLP (3.3x3.3)	1850 pF
ON Semiconductor FDMC8327L	N-Channel	Surface Mount	9.7 mOhm	40 V	2.3 W 30 W	MOSFET (Metal Oxide)	3 V	12 A 14 A	-55 °C	150 °C	8-PowerWDFN	20 V	26 nC	4.5 V 10 V	8-MLP (3.3x3.3)	1850 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.37
		10	$ 1.52
		100	$ 1.04
		500	$ 0.83
		1000	$ 0.76
	Digi-Reel®	1	$ 2.37
		10	$ 1.52
		100	$ 1.04
		500	$ 0.83
		1000	$ 0.76
	Tape & Reel (TR)	3000	$ 0.68
		6000	$ 0.66

Description

General part information

FDMC8327L Series

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.