RJK03E1DNS-00#J5

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POWER FIELD-EFFECT TRANSISTOR

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Discrete Semiconductor Products

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POWER FIELD-EFFECT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03E1DNS-00#J5

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.7 nC
Input Capacitance (Ciss) (Max) @ Vds	2300 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max) [Max]	15 W
Rds On (Max) @ Id, Vgs	6.9 mOhm
Supplier Device Package	8-HWSON (3.3x3.3)
Technology	MOSFET (Metal Oxide)

N Channel Power MOSFET

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Renesas Electronics Corporation RJK03E1DNS-00#J5	8-HWSON (3.3x3.3)	15 W	8-PowerWDFN	N-Channel	25 A	10.7 nC	150 °C	Surface Mount	6.9 mOhm	MOSFET (Metal Oxide)	30 V	2300 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	275	$ 1.09

General part information

The RJK03E1DNS is a N Channel Power MOSFET.

Technical documentation and resources