Catalog
N Channel Power MOSFET
Description
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The RJK03E1DNS is a N Channel Power MOSFET.
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N Channel Power MOSFET
N Channel Power MOSFET
| Part | Supplier Device Package | Power Dissipation (Max) [Max] | Package / Case | FET Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Mounting Type | Rds On (Max) @ Id, Vgs | Technology | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | 8-HWSON (3.3x3.3) | 15 W | 8-PowerWDFN | N-Channel | 25 A | 10.7 nC | 150 °C | Surface Mount | 6.9 mOhm | MOSFET (Metal Oxide) | 30 V | 2300 pF |