Catalog
N Channel Power MOSFET
Description
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The RJK03E1DNS is a N Channel Power MOSFET.
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N Channel Power MOSFET
N Channel Power MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Package / Case | Technology | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Operating Temperature | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 10.7 nC | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 25 A | 8-HWSON (3.3x3.3) | N-Channel | 15 W | 30 V | 150 °C | 6.9 mOhm | 2300 pF |