Discrete Semiconductor Products
BSM080D12P2C008
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 80 A, 1.2 KV, MODULE
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Discrete Semiconductor Products
BSM080D12P2C008
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, HALF BRIDGE, DUAL N CHANNEL, 80 A, 1.2 KV, MODULE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSM080D12P2C008 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 800 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175 °C |
| Package / Case | Module |
| Power - Max [Max] | 600 W |
| Supplier Device Package | Module |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BSM080D12P2C008 Series
BSM080D12P2C008 is a half bridge module consisting of SiC-DMOS and SiC SBD.
Documents
Technical documentation and resources