BSM080D12P2C008 Series

1200V, 80A, Half bridge, Silicon-carbide (SiC) Power Module

Catalog

1200V, 80A, Half bridge, Silicon-carbide (SiC) Power Module

Part	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Mounting Type	Operating Temperature	Vgs(th) (Max) @ Id	Configuration	Package / Case	Technology
Rohm Semiconductor BSM080D12P2C008	1200 V	1.2 kV	600 W	800 pF	Module	Chassis Mount	175 °C	4 V	2 N-Channel (Dual)	Module	Silicon Carbide (SiC)

1200V, 80A, Half bridge, Silicon-carbide (SiC) Power Module

• Low surge, low switching loss., High-speed switching possible., Reduced temperature dependance.

BSM080D12P2C008 is a half bridge module consisting of SiC-DMOS and SiC SBD.