Discrete Semiconductor Products

PSMN3R3-60PLQ

Obsolete

MOSFET N-CH 60V 130A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 130A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN3R3-60PLQ

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC
Input Capacitance (Ciss) (Max) @ Vds	10115 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	3.4 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id [Max]
Freescale Semiconductor - NXP PSMN3R3-60PLQ	130 A	-55 °C	175 ░C	MOSFET (Metal Oxide)	3.4 mOhm	2.1 V	60 V	N-Channel	Through Hole	4.5 V 10 V	20 V	10115 pF	TO-220AB	TO-220-3	95 nC
Freescale Semiconductor - NXP PSMN3R3-40MSHX	118 A	-55 °C	175 ░C	MOSFET (Metal Oxide)	3.3 mOhm	3.6 V	40 V	N-Channel	Surface Mount	10 V	20 V	3063 pF	LFPAK33		42 nC	101 W
Freescale Semiconductor - NXP PSMN3R3-40MLHX	118 A	-55 °C	175 ░C	MOSFET (Metal Oxide)	3.3 mOhm		40 V	N-Channel	Surface Mount	4.5 V 10 V	20 V	3794 pF	LFPAK33		54 nC	101 W	2.15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 130A (Tc) 293W (Tc) Through Hole TO-220AB

Technical documentation and resources