PSMN3R3-40MLHX

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MOSFET N-CH 40V 118A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 40V 118A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN3R3-40MLHX

Current - Continuous Drain (Id) @ 25°C	118 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds	3794 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	101 W
Rds On (Max) @ Id, Vgs	3.3 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id [Max]
Freescale Semiconductor - NXP PSMN3R3-60PLQ	130 A	-55 °C	175 ░C	MOSFET (Metal Oxide)	3.4 mOhm	2.1 V	60 V	N-Channel	Through Hole	4.5 V 10 V	20 V	10115 pF	TO-220AB	TO-220-3	95 nC
Freescale Semiconductor - NXP PSMN3R3-40MSHX	118 A	-55 °C	175 ░C	MOSFET (Metal Oxide)	3.3 mOhm	3.6 V	40 V	N-Channel	Surface Mount	10 V	20 V	3063 pF	LFPAK33		42 nC	101 W
Freescale Semiconductor - NXP PSMN3R3-40MLHX	118 A	-55 °C	175 ░C	MOSFET (Metal Oxide)	3.3 mOhm		40 V	N-Channel	Surface Mount	4.5 V 10 V	20 V	3794 pF	LFPAK33		54 nC	101 W	2.15 V

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General part information

N-Channel 40 V 118A (Tc) 101W (Tc) Surface Mount LFPAK33

Technical documentation and resources