STB60NF06T4
ActivePOWER MOSFET, N CHANNEL, 60 V, 60 A, 0.016 OHM, TO-263 (D2PAK), SURFACE MOUNT
STB60NF06T4
ActivePOWER MOSFET, N CHANNEL, 60 V, 60 A, 0.016 OHM, TO-263 (D2PAK), SURFACE MOUNT
Technical Specifications
Parameters and characteristics for this part
| Specification | STB60NF06T4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 66 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1810 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -65 C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 110 W |
| Rds On (Max) @ Id, Vgs | 16 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB60 Series
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
Documents
Technical documentation and resources