Specification	BD242C

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	300 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	25 hFE
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	40 W
Supplier Device Package	TO-220
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

BD242C Series

3.0 A, 100 V PNP Bipolar Power Transistor

Part	Mounting Type	Package / Case	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition
ON Semiconductor BD242ATU	Through Hole	TO-220-3	150 °C	3 A	60 V	40 W	TO-220-3	1.2 V	25 hFE	PNP	300 µA
ON Semiconductor BD242CG	Through Hole	TO-220-3		3 A		40 W	TO-220	1.2 V	25 hFE	PNP	300 µA	150 °C	-65 °C	100 V	3 MHz
ON Semiconductor BD242TU	Through Hole	TO-220-3	150 °C	3 A	45 V	40 W	TO-220-3	1.2 V	25 hFE	PNP	300 µA
ON Semiconductor BD242C	Through Hole	TO-220-3		3 A		40 W	TO-220	1.2 V	25 hFE	PNP	300 µA	150 °C	-65 °C	100 V	3 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BD242C Series

The 3 A, 100V PNP Bipolar Power Transistor designed for use in general purpose amplifier and switching applications. BD241C (NPN), BD242B (PNP) and BD242C (PNP) are complementary devices.

Documents

Technical documentation and resources

Datasheet

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing

Datasheet

BD242/A/B/C

Datasheet