BD242C Series

3.0 A, 100 V PNP Bipolar Power Transistor

Catalog

3.0 A, 100 V PNP Bipolar Power Transistor

Part	Mounting Type	Package / Case	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition
ON Semiconductor BD242ATU	Through Hole	TO-220-3	150 °C	3 A	60 V	40 W	TO-220-3	1.2 V	25 hFE	PNP	300 µA
ON Semiconductor BD242CG	Through Hole	TO-220-3		3 A		40 W	TO-220	1.2 V	25 hFE	PNP	300 µA	150 °C	-65 °C	100 V	3 MHz
ON Semiconductor BD242TU	Through Hole	TO-220-3	150 °C	3 A	45 V	40 W	TO-220-3	1.2 V	25 hFE	PNP	300 µA
ON Semiconductor BD242C	Through Hole	TO-220-3		3 A		40 W	TO-220	1.2 V	25 hFE	PNP	300 µA	150 °C	-65 °C	100 V	3 MHz

Catalog

3.0 A, 100 V PNP Bipolar Power Transistor

Key Features

• Collector-Emitter Saturation Voltage -VCE= 1.2 Vdc (Max) @ IC= 3.0 Adc

• Collector-Emitter Sustaining Voltage -VCEO(sus)= 80 Vdc (Min.) BD242B= 100 Vdc (Min.) BD241C, BD242C

• High Current Gain - Bandwidth ProductfT= 3.0 MHz (Min) @ IC= 500 mAdc

• Compact TO-220 AB Package

• Pb-Free Packages are Available

Description

The 3 A, 100V PNP Bipolar Power Transistor designed for use in general purpose amplifier and switching applications. BD241C (NPN), BD242B (PNP) and BD242C (PNP) are complementary devices.