L6388ED013TR
ActiveMOSFET DRIVER, HALF BRIDGE, 9.1V TO 17V SUPPLY, 650MA OUT, 160NS DELAY, SOIC-8
L6388ED013TR
ActiveMOSFET DRIVER, HALF BRIDGE, 9.1V TO 17V SUPPLY, 650MA OUT, 160NS DELAY, SOIC-8
Technical Specifications
Parameters and characteristics for this part
| Specification | L6388ED013TR |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 400 mA |
| Current - Peak Output (Source, Sink) [custom] | 650 mA |
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, MOSFET (N-Channel) |
| High Side Voltage - Max (Bootstrap) [Max] | 600 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH | 1.1 V, 1.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Rise / Fall Time (Typ) | 40 ns, 70 ns |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply | 17 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
L6388E Series
The L6388E is a high voltage gate driver, manufactured with the BCD™ "offline" technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. Further prevention from outputs cross conduction is guaranteed by the deadtime function.
The L6388E device has two input and two output pins, and guarantees the outputs switch in phase with inputs. The logic inputs are CMOS/TTL compatible (3.3 V, 5 V and 15 V) to ease the interfacing with controlling devices.
The bootstrap diode is integrated in the driver allowing a more compact and reliable solution.
Documents
Technical documentation and resources
