Specification	CSD17522Q5A

Current - Continuous Drain (Id) @ 25°C	87 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.3 nC
Input Capacitance (Ciss) (Max) @ Vds	695 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	3 W
Rds On (Max) @ Id, Vgs	8.1 mOhm
Supplier Device Package	8-VSONP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

CSD17522Q5A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 8.1 mOhm

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)
Texas Instruments CSD17522Q5A	-55 °C	150 °C	2 V	Surface Mount	8-PowerTDFN	MOSFET (Metal Oxide)	N-Channel	695 pF	30 V	20 V	8-VSONP (5x6)	8.1 mOhm	4.3 nC	87 A	3 W	4.5 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.

Technical documentation and resources