CSD17522Q5A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 8.1 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 8.1 mOhm

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)
Texas Instruments CSD17522Q5A	-55 °C	150 °C	2 V	Surface Mount	8-PowerTDFN	MOSFET (Metal Oxide)	N-Channel	695 pF	30 V	20 V	8-VSONP (5x6)	8.1 mOhm	4.3 nC	87 A	3 W	4.5 V 10 V

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 8.1 mOhm

Key Features

• Optimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageOptimized for 5V Gate DriveUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic Package

Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.