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CSDxxxxF4T
Discrete Semiconductor Products

CSD13383F4T

Active
Texas Instruments

12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6MM, 44 MOHM, GATE ESD PROTECTION

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CSDxxxxF4T
Discrete Semiconductor Products

CSD13383F4T

Active
Texas Instruments

12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6MM, 44 MOHM, GATE ESD PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD13383F4T
Current - Continuous Drain (Id) @ 25°C2.9 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]2.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]291 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs44 mOhm
Supplier Device Package3-PICOSTAR
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.61
10$ 0.50
100$ 0.39
Digi-Reel® 1$ 0.61
10$ 0.50
100$ 0.39
Tape & Reel (TR) 250$ 0.38
500$ 0.33
1250$ 0.33
Texas InstrumentsSMALL T&R 1$ 0.75
100$ 0.51
250$ 0.39
1000$ 0.26

Description

General part information

CSD13383F4 Series

This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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