CSD13383F4 Series

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 44 mOhm, gate ESD protection

Catalog

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 44 mOhm, gate ESD protection

Part	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Vgs (Max)	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)
Texas Instruments CSD13383F4T	500 mW	3-PICOSTAR	1.25 V	44 mOhm	291 pF	2.5 V 4.5 V	2.6 nC	-55 °C	150 °C	2.9 A	MOSFET (Metal Oxide)	N-Channel	10 V	Surface Mount	3-XFDFN	12 V
Texas Instruments CSD13383F4	500 mW	3-PICOSTAR	1.25 V	44 mOhm	291 pF	2.5 V 4.5 V	2.6 nC	-55 °C	150 °C	2.9 A	MOSFET (Metal Oxide)	N-Channel	10 V	Surface Mount	3-XFDFN	12 V

Catalog

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 44 mOhm, gate ESD protection

Key Features

• Low on-resistanceUltra low Qgand QgdUltra-small footprint (0402 case size)1.0 mm × 0.6 mmLow profile0.36 mm heightIntegrated ESD protection diodeRated >2 kV HBMRated >2 kV CDMLead and halogen freeRoHS compliantLow on-resistanceUltra low Qgand QgdUltra-small footprint (0402 case size)1.0 mm × 0.6 mmLow profile0.36 mm heightIntegrated ESD protection diodeRated >2 kV HBMRated >2 kV CDMLead and halogen freeRoHS compliant

Description

This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . .