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Technical Specifications

Parameters and characteristics for this part

SpecificationPXP6R1-30QLJ
Current - Continuous Drain (Id) @ 25°C13.5 A, 71.1 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]116.7 nC
Input Capacitance (Ciss) (Max) @ Vds3800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)50 W
Power Dissipation (Max)1.8 W
Rds On (Max) @ Id, Vgs6.1 mOhm
Supplier Device PackageMLPAK33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.03
10$ 0.84
100$ 0.66
500$ 0.56
1000$ 0.45
Digi-Reel® 1$ 1.03
10$ 0.84
100$ 0.66
500$ 0.56
1000$ 0.45
N/A 2257$ 1.98
Tape & Reel (TR) 3000$ 0.43
6000$ 0.41
9000$ 0.40

Description

General part information

PXP6R1-30QL Series

P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.