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30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Vgs (Max) | Package / Case | Supplier Device Package | Power Dissipation (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 6.1 mOhm | 3800 pF | 2 V | 25 V | 8-PowerVDFN | MLPAK33 | 50 W | 1.8 W | 30 V | Surface Mount | 150 °C | -55 °C | 4.5 V 10 V | 13.5 A 71.1 A | 116.7 nC | MOSFET (Metal Oxide) | P-Channel |