STB20NM50FDT4
NRNDTRANS MOSFET N-CH 500V 20A 3-PIN(2+TAB) D²PAK T/R
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STB20NM50FDT4
NRNDTRANS MOSFET N-CH 500V 20A 3-PIN(2+TAB) D²PAK T/R
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB20NM50FDT4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 192 W |
| Rds On (Max) @ Id, Vgs | 250 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB20NM50FD Series
The FDmesh associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.High dv/dt and avalanche capabilities100% avalanche testedLow input capacitance and gate chargeLow gate input resistanceTight process control and high manufacturing yields
Documents
Technical documentation and resources