Discrete Semiconductor Products
BD912
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 100 V, 15 A, 90 W, TO-220AB, THROUGH HOLE
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Discrete Semiconductor Products
BD912
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 100 V, 15 A, 90 W, TO-220AB, THROUGH HOLE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BD912 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 15 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 15 |
| Frequency - Transition | 3 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 90 W |
| Supplier Device Package | TO-220 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BD912 Series
The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications.
The complementary PNP types are BD910 and BD912 respectively.
Documents
Technical documentation and resources