Discrete Semiconductor Products

STF6N90K5

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STMicroelectronics

N-CHANNEL 900 V, 0.91 OHM TYP., 6 A MDMESH K5 POWER MOSFET IN A TO-220FP PACKAGE

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DocumentsProduct Change Notice EN DS11900 +15

Discrete Semiconductor Products

STF6N90K5

Active

STMicroelectronics

N-CHANNEL 900 V, 0.91 OHM TYP., 6 A MDMESH K5 POWER MOSFET IN A TO-220FP PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice EN DS11900 +15

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF6N90K5

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	1.1 Ohm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STF6N90K5 Series

N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-220FP package

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	FET Type	Mounting Type	Technology	Power Dissipation (Max)
STMicroelectronics STF6N90K5	10 V	5 V	30 V	1.1 Ohm	TO-220-3 Full Pack	6 A	900 V	150 °C	-55 °C	TO-220FP	N-Channel	Through Hole	MOSFET (Metal Oxide)	25 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	281	$ 2.84
Newark	Each	1	$ 3.43
		10	$ 1.95
		100	$ 1.77
		500	$ 1.67
		1000	$ 1.53
		2500	$ 1.40
		5000	$ 1.38
TME	N/A	1	$ 3.36
		10	$ 2.69
		50	$ 2.54
		100	$ 2.22
		250	$ 2.02
		500	$ 1.88

Description

General part information

STF6N90K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.