Discrete Semiconductor Products

SIS110DN-T1-GE3

Active

MOSFET N-CH 100V 5.2A/14.2A PPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 100V 5.2A/14.2A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIS110DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	14.2 A, 5.2 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds	550 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	3.2 W, 24 W
Rds On (Max) @ Id, Vgs	54 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type
Vishay General Semiconductor - Diodes Division SIS110DN-T1-GE3	3.2 W 24 W	54 mOhm	13 nC	N-Channel	550 pF	-55 °C	150 °C	20 V	4 V	5.2 A 14.2 A	MOSFET (Metal Oxide)	PowerPAK® 1212-8	100 V	PowerPAK® 1212-8	10 V	7.5 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 5.2A (Ta), 14.2A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources