SIS110 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 5.2A/14.2A PPAK
| Part | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Technology | Package / Case | Drain to Source Voltage (Vdss) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 3.2 W 24 W | 54 mOhm | 13 nC | N-Channel | 550 pF | -55 °C | 150 °C | 20 V | 4 V | 5.2 A 14.2 A | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | 100 V | PowerPAK® 1212-8 | 10 V | 7.5 V | Surface Mount |