Discrete Semiconductor Products

SP8M6TB

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MOSFET N/P-CH 30V 5A 8SOP

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Discrete Semiconductor Products

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MOSFET N/P-CH 30V 5A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SP8M6TB

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	5 A, 3.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	3.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	230 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs [Max]	51 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Package / Case	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	FET Feature	Configuration	Mounting Type	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Rohm Semiconductor SP8M6TB	30 V	2.5 V	230 pF	0.154 in	8-SOIC	3.9 mm	8-SOP	3.5 A 5 A	2 W	Logic Level Gate	N and P-Channel	Surface Mount	150 °C	3.9 nC	51 mOhm	MOSFET (Metal Oxide)
Rohm Semiconductor SP8M6HZGTB	30 V	2.5 V		0.154 in	8-SOIC	3.9 mm	8-SOP	3.5 A 5 A	2 W		N and P-Channel	Surface Mount	150 °C		51 mOhm 90 mOhm	MOSFET (Metal Oxide)	3.9 nC 5.5 nC	230 pF 490 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Mosfet Array 30V 5A, 3.5A 2W Surface Mount 8-SOP

Technical documentation and resources

No documents available