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Technical Specifications
Parameters and characteristics for this part
| Specification | GA301AE3 |
|---|---|
| Current - Gate Trigger (Igt) (Max) [Max] | 200 µA |
| Current - Hold (Ih) (Max) [Max] | 5 mA |
| Current - Off State (Max) [Max] | 100 nA |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | 0 °C |
| Package / Case | TO-18-3 Metal Can, TO-206AA |
| SCR Type | Standard Recovery |
| Supplier Device Package | TO-18 |
| Supplier Device Package | TO-206AA |
| Voltage - Gate Trigger (Vgt) (Max) [Max] | 750 mV |
| Voltage - Off State | 100 V |
| Voltage - On State (Vtm) (Max) [Max] | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bag | 100 | $ 28.80 | |
| Microchip Direct | N/A | 1 | $ 31.00 | |
| Newark | Each | 100 | $ 28.80 | |
| 500 | $ 27.68 | |||
Description
General part information
GA301AE3-SCR-Thyristor Series
The Microchip Nanosecond Thyristor Switch combines the turn on speed of logic level transistors with high current switching capability inherent in SCRs. With this device engineers can now design circuits capable of switching pulse currents of 1A in less than 10ns or up to 30A in less that 20ns. The GA/GB200 series is specifically designed for use as switching elements in high speed, low-to-medium power radar pulse modulators. Other applications include switching elements for phased array radars. Laser pulse drivers, harmonic wave form generators, line drivers and high current replacements for avalanche transistors. For applications requiring higher voltage levels, Microchip has developed several "series string" circuits which allow the series connection of virtually and unlimited number of devices for voltages as high as 2000V with no significant decrease in speed. The circuits are described in Microchip’s design Note 14.
Documents
Technical documentation and resources