SQJ410EP-T1_GE3

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MOSFET N-CH 30V 32A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 30V 32A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ410EP-T1_GE3

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	6210 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	83 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.9 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	Grade	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)
Vishay General Semiconductor - Diodes Division SQJ410EP-T1_GE3	83 W	Automotive	PowerPAK® SO-8	30 V	N-Channel	AEC-Q101	-55 °C	175 ░C	Surface Mount	4.5 V 10 V	2.5 V	3.9 mOhm	MOSFET (Metal Oxide)	6210 pF	32 A	110 nC	PowerPAK® SO-8	20 V

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General part information

N-Channel 30 V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources