SQJ410 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 30V 32A PPAK SO-8
| Part | Power Dissipation (Max) | Grade | Supplier Device Package | Drain to Source Voltage (Vdss) | FET Type | Qualification | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Technology | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 83 W | Automotive | PowerPAK® SO-8 | 30 V | N-Channel | AEC-Q101 | -55 °C | 175 ░C | Surface Mount | 4.5 V 10 V | 2.5 V | 3.9 mOhm | MOSFET (Metal Oxide) | 6210 pF | 32 A | 110 nC | PowerPAK® SO-8 | 20 V |