Discrete Semiconductor Products

FDB075N15A_SN00284

Obsolete

ON Semiconductor

MOSFET N-CH 150V 130A D2PAK

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Discrete Semiconductor Products

FDB075N15A_SN00284

Obsolete

ON Semiconductor

MOSFET N-CH 150V 130A D2PAK

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDB075N15A_SN00284

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds	7350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	333 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDB075N15A_F085 Series

N-Channel Power Trench<sup>®</sup> MOSFET 150V, 110A, 5.5mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	FET Type	Vgs (Max)	Grade	Gate Charge (Qg) (Max) @ Vgs	Qualification
ON Semiconductor FDB075N15A-F085C
ON Semiconductor FDB075N15A_SN00284	-55 °C	175 ░C	4 V	150 V	7350 pF	MOSFET (Metal Oxide)	TO-263 (D2PAK)	10 V	130 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	7.5 mOhm	333 W	100 nC	Surface Mount	N-Channel	20 V
ON Semiconductor FDB075N15A-F085	-55 °C	175 ░C	4 V	150 V	5595 pF	MOSFET (Metal Oxide)	TO-263 (D2PAK)	10 V	110 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	7.5 mOhm	333 W		Surface Mount	N-Channel	20 V	Automotive	95 nC	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDB075N15A_F085 Series

N-Channel Power Trench®MOSFET 150V, 110A, 5.5mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.

Documents

Technical documentation and resources

No documents available