JANSF2N2920

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RH SMALL-SIGNAL BJT

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Discrete Semiconductor Products

JANSF2N2920

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Microchip Technology

RH SMALL-SIGNAL BJT

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JANSF2N2920

Current - Collector (Ic) (Max) [Max]	30 mA
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	300
Grade	Military
Mounting Type	Through Hole
Package / Case	TO-78-6 Metal Can
Power - Max [Max]	350 mW
Qualification	MIL-PRF-19500
Supplier Device Package	TO-78-6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

JANTXV2N2920A-Dual-Transistor Series

NPN Silicon Dual 60V, 0.03A

Part	Current - Collector Cutoff (Max) [Max]	Qualification	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Mounting Type	Power - Max [Max]	Package / Case	Supplier Device Package	Grade	Operating Temperature
Microchip Technology JANSR2N2920U	10 µA	MIL-PRF-19500/355	60 V	30 mA	300 mV	300	2 NPN (Dual)	Surface Mount	350 mW	6-SMD No Lead	6-SMD	Military
Microchip Technology JANTXV2N2920		MIL-PRF-19500/355	60 V	30 mA			2 NPN (Dual)	Through Hole		TO-78-6 Metal Can	TO-78-6	Military	200 °C
Microchip Technology 2N2920U	10 µA		60 V	30 mA	300 mV	300	2 NPN (Dual)	Surface Mount	350 mW	6-SMD No Lead	6-SMD
Microchip Technology JANS2N2920U	10 µA	MIL-PRF-19500/355	60 V	30 mA	300 mV	300	2 NPN (Dual)	Surface Mount	350 mW	6-SMD No Lead	6-SMD	Military
Microchip Technology 2N2920U/TR	10 µA		60 V	30 mA	300 mV	300	2 NPN (Dual)	Surface Mount	350 mW	6-SMD No Lead	6-SMD
Microchip Technology JAN2N2920U	10 µA	MIL-PRF-19500/355	60 V	30 mA	300 mV	300	2 NPN (Dual)	Surface Mount	350 mW	6-SMD No Lead	U	Military	200 °C
Microchip Technology JANSF2N2920	10 µA	MIL-PRF-19500	60 V	30 mA	300 mV	300	2 NPN (Dual)	Through Hole	350 mW	TO-78-6 Metal Can	TO-78-6	Military
Microchip Technology JANSR2N2920	10 µA	MIL-PRF-19500	60 V	30 mA	300 mV	300	2 NPN (Dual)	Through Hole	350 mW	TO-78-6 Metal Can	TO-78-6	Military
Microchip Technology JANTXV2N2920L	10 µA	MIL-PRF-19500/355	60 V	30 mA	300 mV	300	2 NPN (Dual)	Through Hole	350 mW	TO-78-6 Metal Can	TO-78-6	Military	200 °C
Microchip Technology JANTX2N2920U/TR	10 µA	MIL-PRF-19500/355	60 V	30 mA	300 mV	300	2 NPN (Dual)	Surface Mount	350 mW	6-SMD No Lead	U	Military

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	50	$ 207.70

Description

General part information

JANTXV2N2920A-Dual-Transistor Series

This specification covers the performance requirements for two electrically isolated, matched NPN radiation hardened silicon 2N2919 and 2N2920, unitized transistors as one dual unit. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/355, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device (die), as specified in MIL-PRF-19500/355. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L", "R", "F", "G" and "H") are provided for JANTXV, JANS, JANHC, JANKC, JANHCD, and JANKCD product assurance levels.

Documents

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