Discrete Semiconductor Products

SIS434DN-T1-GE3

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MOSFET N-CH 40V 35A PPAK 1212-8

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Discrete Semiconductor Products

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MOSFET N-CH 40V 35A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS434DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	1530 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	52 W, 3.8 W
Rds On (Max) @ Id, Vgs [Max]	7.6 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIS434DN-T1-GE3	40 V	PowerPAK® 1212-8	35 A	3.8 W 52 W	PowerPAK® 1212-8	-55 °C	150 °C	2.2 V	4.5 V 10 V	20 V	Surface Mount	1530 pF	MOSFET (Metal Oxide)	N-Channel	7.6 mOhm	40 nC

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General part information

N-Channel 40 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources