SIS434 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 40V 35A PPAK 1212-8
| Part | Drain to Source Voltage (Vdss) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Technology | FET Type | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 40 V | PowerPAK® 1212-8 | 35 A | 3.8 W 52 W | PowerPAK® 1212-8 | -55 °C | 150 °C | 2.2 V | 4.5 V 10 V | 20 V | Surface Mount | 1530 pF | MOSFET (Metal Oxide) | N-Channel | 7.6 mOhm | 40 nC |