Discrete Semiconductor Products

FDS8882

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ON Semiconductor

N-CHANNEL POWERTRENCH® MOSFET 30V, 9A, 20.0MΩ

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Search across all available documentation for this part.

DocumentsPackage Drawing-751EB-SOIC8 Datasheet

Discrete Semiconductor Products

FDS8882

Active

ON Semiconductor

N-CHANNEL POWERTRENCH® MOSFET 30V, 9A, 20.0MΩ

Deep-Dive with AI

DocumentsPackage Drawing-751EB-SOIC8 Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS8882

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	940 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDS8882 Series

N-Channel PowerTrench® MOSFET 30V, 9A, 20.0mΩ

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [x]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Package / Case [y]	Package / Case [x]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type
ON Semiconductor FDS8882	30 V	20 nC	9 A	4.5 V 10 V	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	N-Channel	-55 °C	150 °C	2.5 W	8-SOIC	20 V	20 mOhm	940 pF	3 V	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	825	$ 0.36

Description

General part information

FDS8882 Series

The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.